GRAPHENE FET CHIP S10

Code: GRFETS10-1EA D2-231

Application

Graphene device researchFET based sensor research for active materials deposited on grapheneChemical sensorsBiosensorsBioelectronicsMagnetic sensorsPhotodetectors...


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Your Price
€620.80 EACH
€763.58 inc. VAT

Application

Graphene device researchFET based sensor research for active materials deposited on grapheneChemical sensorsBiosensorsBioelectronicsMagnetic sensorsPhotodetectors

GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.

Caution

Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.To maintain the quality of the devices, we recommend taking the following precautions: Be careful when handling the graphene FET chip. Tweezers should not contact the device area directly.

Features and Benefits

Device Features: State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene Devices are not encapsulated and can be functionalized by additives Perfect platform for sensor research and development 36 individual graphene FETs per chip Mobilities typically > 1000 cm2/V·s

General description

Device configuration:This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry. The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.

Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.

descriptionMaximum gate-source voltage: ± 50 VMaximum temperature rating: 150 °CMaximum drain-source current density: 107 A/cm2, Monolayer CVD grown Graphene based field effect transistors (FET) S10, Dirac point:﹤ 50 V, Gate Oxide material: SiO2, Graphene field-effect mobility: >1000 cm2/V·s, Metallization: Chromium 2 nm/Gold 50 nm, Residual charge carrier density: ﹤2 x 1012 cm-2, Yield >75%, Gate Oxide thickness: 90 nm, Resistivity of substrate: 1-10 Ω·cm
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